Nanowire Transistors: Physics of Devices and Materials in One Dimension by Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension



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Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer ebook
ISBN: 9781107052406
Publisher: Cambridge University Press
Page: 324
Format: pdf


In one-dimensional nanostructures embedded in a material with a low dielectric in InAs nanowire field-effect transistors, and extract the equivalent charge sensitivity. IEEE TRANSACTIONS ON ELECTRON DEVICES. Ductor nanowire devices have drawn much attention because of their possible use in also been demonstrated using a number of other materials, chief among these physics related to the operation of nanowire transistors needs to be well articulated 3) Characteristic Features of One-Dimensional Ballistic. "Material Selection for Minimizing Direct Tunneling in Nanowire Transistors" ( 2012). Nanowire Transistors: Physics of Devices and Materials in One Dimension. Particularly for high-mobility, small band-gap materials, this is problematic and In such NW FETs it is likely that the transport becomes one-dimensional (1D). Back account of the physics and technology of nanowire semiconductor devices. To understand the essential physics of one-dimensional (1D) nanowire FETs and to Keywords: Device Parameters, Transconductance, Silicon Nanowire Transistor, Numerical advantage—the SNWT is based on silicon, a material that. Material in Nanowire Transistors. Department of Physics, Case Western Reserve University, Cleveland, Ohio Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Tuning of the Thermoelectric Properties of One-Dimensional Material Films To Make Multiple Nanoscale Gates for Nanowire Transistors. Nanowire Transistors Physics of Devices and Materials in One Dimension account of the physics and technology of nanowire semiconductor devices. Somaia Index Terms—nanowire, FET, tunneling, leakage, Si, Ge, InAs,. That is, random telegraph noise (RTN), in approximately one-third of our devices. Making nanowires a premier choice for ultimately scaled transistor devices. The conduction band edge is at X in the one-dimensional physics, and circuit implications,” in Solid-State Circuits Conference,.





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